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FGW25N120WE IGBT Transistor


FGW25N120WE is an IGBT type transistor with a TO264 sheath. FGW25N120WE in the IGBT category is an N Channel Transistor. The FGW25N120WE has 25A collector current and has a 1200V Collector-Emitter voltage.

FGW25N120WE IGBT Transistor - 1200V 25A Technical Specifications


DC Collector Current (Ic)
Manufacturer IXYS
Product Category Semiconductor
Subcategory IGBT
Technology W Series
Package Type TO264
Breakdown Voltage (Vbr) 1200V
25A

Documents


Useful Links


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FGW25N120WE IGBT Transistor - 1200V 25A

Brand: Fuji Electric
Stock Code : 17154
3.85 EUR
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  • FGW25N120WE IGBT Transistor


    FGW25N120WE is an IGBT type transistor with a TO264 sheath. FGW25N120WE in the IGBT category is an N Channel Transistor. The FGW25N120WE has 25A collector current and has a 1200V Collector-Emitter voltage.

    FGW25N120WE IGBT Transistor - 1200V 25A Technical Specifications


    DC Collector Current (Ic)
    Manufacturer IXYS
    Product Category Semiconductor
    Subcategory IGBT
    Technology W Series
    Package Type TO264
    Breakdown Voltage (Vbr) 1200V
    25A

    Documents


    Useful Links


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